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Fully solution-processed zinc oxide MIS capacitors by ultrasonic spray pyrolysis in air ambient
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class="elsevierStyleTextfn">Original</span>" "titulo" => "Nanocolumnar CdS thin films grown by glancing angle deposition from a sublimate vapor effusion source" "tienePdf" => "en" "tieneTextoCompleto" => "en" "tieneResumen" => "en" "paginas" => array:1 [ 0 => array:2 [ "paginaInicial" => "271" "paginaFinal" => "277" ] ] "contieneResumen" => array:1 [ "en" => true ] "contieneTextoCompleto" => array:1 [ "en" => true ] "contienePdf" => array:1 [ "en" => true ] "resumenGrafico" => array:2 [ "original" => 0 "multimedia" => array:7 [ "identificador" => "fig0030" "etiqueta" => "Fig. 6" "tipo" => "MULTIMEDIAFIGURA" "mostrarFloat" => true "mostrarDisplay" => false "figura" => array:1 [ 0 => array:4 [ "imagen" => "gr6.jpeg" "Alto" => 1358 "Ancho" => 1686 "Tamanyo" => 95258 ] ] "descripcion" => array:1 [ "en" => "<p id="spar0035" class="elsevierStyleSimplePara elsevierViewall">Transmittance spectra of CdS thin films grown with incident deposition flux angles.</p>" ] ] ] "autores" => array:1 [ 0 => array:2 [ "autoresLista" => "Luis Germán Daza, Román Castro-Rodríguez, Marco Cirerol-Carrillo, Enrique Adrián Martín-Tovar, José Méndez-Gamboa, Rubén Medina-Esquivel, Ignacio Pérez-Quintana, Augusto Iribarren" "autores" => array:8 [ 0 => array:2 [ "nombre" => "Luis Germán" "apellidos" => "Daza" ] 1 => array:2 [ "nombre" => "Román" "apellidos" => "Castro-Rodríguez" ] 2 => array:2 [ "nombre" => "Marco" "apellidos" => "Cirerol-Carrillo" ] 3 => array:2 [ "nombre" => "Enrique Adrián" "apellidos" => "Martín-Tovar" ] 4 => array:2 [ "nombre" => "José" "apellidos" => "Méndez-Gamboa" ] 5 => array:2 [ "nombre" => "Rubén" "apellidos" => "Medina-Esquivel" ] 6 => array:2 [ "nombre" => "Ignacio" "apellidos" => "Pérez-Quintana" ] 7 => array:2 [ "nombre" => "Augusto" "apellidos" => "Iribarren" ] ] ] ] ] "idiomaDefecto" => "en" "EPUB" => "https://multimedia.elsevier.es/PublicationsMultimediaV1/item/epub/S1665642317300470?idApp=UINPBA00004N" "url" => "/16656423/0000001500000003/v1_201706230112/S1665642317300470/v1_201706230112/en/main.assets" ] "en" => array:20 [ "idiomaDefecto" => true "cabecera" => "<span class="elsevierStyleTextfn">Original</span>" "titulo" => "Fully solution-processed zinc oxide MIS capacitors by ultrasonic spray pyrolysis in air ambient" "tieneTextoCompleto" => true "paginas" => array:1 [ 0 => array:2 [ "paginaInicial" => "278" "paginaFinal" => "282" ] ] "autores" => array:1 [ 0 => array:4 [ "autoresLista" => "Miguel A. Dominguez, Abdu Orduña-Diaz" "autores" => array:2 [ 0 => array:4 [ "nombre" => "Miguel A." "apellidos" => "Dominguez" "email" => array:1 [ 0 => "madominguezj@gmail.com" ] "referencia" => array:2 [ 0 => array:2 [ "etiqueta" => "<span class="elsevierStyleSup">a</span>" "identificador" => "aff0005" ] 1 => array:2 [ "etiqueta" => "<span class="elsevierStyleSup">*</span>" "identificador" => "cor0005" ] ] ] 1 => array:3 [ "nombre" => "Abdu" "apellidos" => "Orduña-Diaz" "referencia" => array:1 [ 0 => array:2 [ "etiqueta" => "<span class="elsevierStyleSup">b</span>" "identificador" => "aff0010" ] ] ] ] "afiliaciones" => array:2 [ 0 => array:3 [ "entidad" => "Centro de Investigaciones en Dispositivos Semiconductores, Instituto de Ciencias, Benemerita Universidad Autónoma de Puebla (BUAP), Puebla 72570, Mexico" "etiqueta" => "a" "identificador" => "aff0005" ] 1 => array:3 [ "entidad" => "Centro de Investigación en Biotecnología Aplicada (CIBA), Instituto Politécnico Nacional, Tlaxcala, Tlaxcala 72197, Mexico" "etiqueta" => "b" "identificador" => "aff0010" ] ] "correspondencia" => array:1 [ 0 => array:3 [ "identificador" => "cor0005" "etiqueta" => "⁎" "correspondencia" => "Corresponding author." ] ] ] ] "resumenGrafico" => array:2 [ "original" => 0 "multimedia" => array:7 [ "identificador" => "fig0020" "etiqueta" => "Fig. 4" "tipo" => "MULTIMEDIAFIGURA" "mostrarFloat" => true "mostrarDisplay" => false "figura" => array:1 [ 0 => array:4 [ "imagen" => "gr4.jpeg" "Alto" => 1332 "Ancho" => 1721 "Tamanyo" => 108430 ] ] "descripcion" => array:1 [ "en" => "<p id="spar0025" class="elsevierStyleSimplePara elsevierViewall">FTIR spectra of the as-deposited ZnO films by ultrasonic spray pyrolysis.</p>" ] ] ] "textoCompleto" => "<span class="elsevierStyleSections"><span id="sec0005" class="elsevierStyleSection elsevierViewall"><span class="elsevierStyleLabel">1</span><span class="elsevierStyleSectionTitle" id="sect0015">Introduction</span><p id="par0005" class="elsevierStylePara elsevierViewall">In recent years, the development of transparent electronics has achieved considerable progress since wearable electronics, transparent circuitry, e-paper, solar cells and more (<a class="elsevierStyleCrossRefs" href="#bib0015">Bashir et al., 2009; Langley et al., 2013</a>; <a class="elsevierStyleCrossRef" href="#bib0130">Zhu, Fang, Preston, Li, & Hu, 2014</a>). Although the recent development in thin-film transistors (TFTs) has been very important to enable this technology, it is necessary to develop other basic devices such as transparent capacitors. These basic devices could work as sensors, energy storage from solar cells, memory devices and charge–discharge capacitors in active-matrix displays could also be very useful to analyze the quality of the dielectric-semiconductor interface in field effect devices (<a class="elsevierStyleCrossRef" href="#bib0055">Khan, Bhansali, & Alshareef, 2011</a>; <a class="elsevierStyleCrossRef" href="#bib0105">Xian & Yoon, 2009</a>; <a class="elsevierStyleCrossRef" href="#bib0120">Yu, Li, Zhang, Sun, & Zheng, 2015</a>; <a class="elsevierStyleCrossRef" href="#bib0125">Zhang et al., 2015</a>).</p><p id="par0010" class="elsevierStylePara elsevierViewall">The use of transparent electrodes is key for developing transparent electronic devices, in which indium tin oxide (ITO) has been most commonly used. However, because of the high demand of indium, the use of ITO will be economically unviable. Therefore, much research is under development to find alternatives to ITO. On the other hand, in addition to the unviability of ITO, the typically used deposition techniques involve high vacuum, present incompatibility with large-area substrates and high-cost. For these reasons, solution-process techniques have become very attractive because of their low-cost, simplicity, compatibility with large-area substrates and the film deposition under ambient conditions. It is important to mention that the consecutive solution-deposition of thin films to fabricate semiconductor devices has been a great challenge (<a class="elsevierStyleCrossRef" href="#bib0045">Hunter et al., 2015</a>). In this work, we present fully solution-processed zinc oxide metal–insulator–semiconductor (MIS) capacitors employing the ultrasonic spray pyrolysis and spin-coating techniques. Fluorine tin oxide and spin-on glass are used as transparent electrode and dielectric film, respectively.</p></span><span id="sec0010" class="elsevierStyleSection elsevierViewall"><span class="elsevierStyleLabel">2</span><span class="elsevierStyleSectionTitle" id="sect0020">Experiment</span><p id="par0015" class="elsevierStylePara elsevierViewall">The films were deposited using a typical home-made ultrasonic spray pyrolysis (USP) deposition system adapted from an ultrasonic humidifier (Heaven Fresh). The transparent electrodes were obtained using fluorine tin oxide (FTO) from 0.2<span class="elsevierStyleHsp" style=""></span>M precursor solution of tin tetrachloride pentahydrate in ethanol with ammonium fluoride diluted in deionized water prepared with F/Sn ratio of 0.52. The ZnO was obtained using 0.2<span class="elsevierStyleHsp" style=""></span>M precursor solution of zinc acetate in methanol. The transparent dielectric was obtained using a spin-on glass solution (SOG700B Filmtronics) diluted 3:1 with deionized water (DI) and spin coated onto the samples (<a class="elsevierStyleCrossRef" href="#bib0020">Dominguez, Rosales, Torres, Moreno, & Orduña, 2012</a>; <a class="elsevierStyleCrossRef" href="#bib0035">Dominguez, Obregon, & Luna-Lopez, 2016</a>).</p><p id="par0020" class="elsevierStylePara elsevierViewall">The orientation of the film was investigated using an X-ray diffractometer (XRD) (Discover D8-Bruker AXS) at 2<span class="elsevierStyleItalic">θ</span> range between 20° and 70° and 0.002° step. For the photoluminescence spectroscopy, a laser of He-Cd with 325<span class="elsevierStyleHsp" style=""></span>nm line was used as exciting source. The photoluminescence measurement was performed using a silicon PIN Thorlabs (DET-210) detector with a spectral response of 200–1100<span class="elsevierStyleHsp" style=""></span>nm. The conventional lock-in technique was employed seeking to minimize the effect of noise. The voltage signal was acquired with a Computer Boards CIO-DAS08 data acquisition card, which operates in conjunction with a stepper motor controller to position the monochromator Sciencetech 9040 to the appropriate wavelength.</p><p id="par0025" class="elsevierStylePara elsevierViewall">The IR absorption spectra of the films were measured with a Brucker FTIR Vertex-70 spectrometer. The IR spectrum was observed for wave numbers between 3500 and 400<span class="elsevierStyleHsp" style=""></span>cm<span class="elsevierStyleSup">−1</span>.</p><p id="par0030" class="elsevierStylePara elsevierViewall">To fabricate the transparent MIS capacitors, glass slides were used as substrates. The glass substrates were chemically cleaned. First, they were cleaned in acetone for 10<span class="elsevierStyleHsp" style=""></span>min, followed with isopropyl alcohol, also for 10<span class="elsevierStyleHsp" style=""></span>min, in an ultrasonic bath. Finally, the substrates were rinsed with deionized water. After that, FTO deposited by USP was used as bottom transparent electrode. Then, the SOG/DI dielectric film was spin-coated onto the samples at room temperature at 3000<span class="elsevierStyleHsp" style=""></span>rpm for 30<span class="elsevierStyleHsp" style=""></span>s. The samples were annealed at 100<span class="elsevierStyleHsp" style=""></span>°C for 15<span class="elsevierStyleHsp" style=""></span>min to reduce humidity and evaporate most of the solvents, to finally be annealed for 5<span class="elsevierStyleHsp" style=""></span>h at 200<span class="elsevierStyleHsp" style=""></span>°C in air ambient. Afterwards, as active layer, ZnO was deposited by USP using air as carrier gas at flow rate of 467<span class="elsevierStyleHsp" style=""></span>sccm on a hotplate at 200<span class="elsevierStyleHsp" style=""></span>°C. Finally, FTO was deposited by USP as the top transparent electrode through a shadow mask. The MIS capacitors have an area of 0.002<span class="elsevierStyleHsp" style=""></span>cm<span class="elsevierStyleSup">2</span> (1<span class="elsevierStyleHsp" style=""></span>mm<span class="elsevierStyleHsp" style=""></span>×<span class="elsevierStyleHsp" style=""></span>0.2<span class="elsevierStyleHsp" style=""></span>mm). The thickness of the ZnO and SOG/DI films was 350<span class="elsevierStyleHsp" style=""></span>±<span class="elsevierStyleHsp" style=""></span>15<span class="elsevierStyleHsp" style=""></span>nm and 44<span class="elsevierStyleHsp" style=""></span>±<span class="elsevierStyleHsp" style=""></span>5<span class="elsevierStyleHsp" style=""></span>nm, respectively.</p><p id="par0035" class="elsevierStylePara elsevierViewall">The capacitance–voltage characteristics were measured using the Keithley-4200 semiconductor characterization system equipped with the 4200-CVU integrated <span class="elsevierStyleItalic">C</span>–<span class="elsevierStyleItalic">V</span>, under dark conditions, air ambient and room temperature. The measurements here reported are representative of 9 capacitors. The measurements present a fluctuation lower than the ±10% on the accumulation capacitance and breakdown voltage.</p></span><span id="sec0015" class="elsevierStyleSection elsevierViewall"><span class="elsevierStyleLabel">3</span><span class="elsevierStyleSectionTitle" id="sect0025">Results and discussion</span><p id="par0040" class="elsevierStylePara elsevierViewall"><a class="elsevierStyleCrossRef" href="#fig0005">Fig. 1</a> shows the schematic cross section of the ZnO MIS capacitors and a top-view photograph of the MIS capacitors. The MIS capacitors are highly transparent, which makes their use feasible in transparent electronics.</p><elsevierMultimedia ident="fig0005"></elsevierMultimedia><p id="par0045" class="elsevierStylePara elsevierViewall"><a class="elsevierStyleCrossRef" href="#fig0010">Fig. 2</a> shows the XRD pattern of the ZnO film. The peaks related to the planes (100), (002), (101), (102), (110), (103) and (112) can be identified according with the JCPDS Card No. 36-1451, where the strongest peak is associated to the (100) plane. The XRD diffractogram shows a polycrystalline nature regardless of the low deposition temperature.</p><elsevierMultimedia ident="fig0010"></elsevierMultimedia><p id="par0050" class="elsevierStylePara elsevierViewall"><a class="elsevierStyleCrossRef" href="#fig0015">Fig. 3</a> shows the room temperature photoluminescence (PL) spectra of the ZnO film. It shows a PL spectrum with a peak centered at 390<span class="elsevierStyleHsp" style=""></span>nm and a high intensity broad band from 450 to 700<span class="elsevierStyleHsp" style=""></span>nm. The UV emission peak at 390<span class="elsevierStyleHsp" style=""></span>nm is associated with the near band-edge (NBE) emission of the wide gap attributed to the recombination of the free excitons (<a class="elsevierStyleCrossRef" href="#bib0080">Padilla-Rueda, Vadillo, & Laserna, 2012</a>; <a class="elsevierStyleCrossRef" href="#bib0090">Sepulveda-Guzman et al., 2010</a>; <a class="elsevierStyleCrossRef" href="#bib0110">Xiao, Zhao, Liu, & Lian, 2013</a>). The visible emission broad band from 450 to 700<span class="elsevierStyleHsp" style=""></span>nm includes the defects and impurities, which are considerable in our case. The origin of this visible emission band may be attributed to oxygen vacancies, zinc vacancies, oxygen antisites, zinc antisites, oxygen interstitial and zinc interstitial (<a class="elsevierStyleCrossRef" href="#bib0050">Janotti & Van de Walle, 2007</a>; <a class="elsevierStyleCrossRef" href="#bib0065">Lin, Fu, & Jia, 2001</a>; <a class="elsevierStyleCrossRef" href="#bib0100">Wang et al., 2006</a>).</p><elsevierMultimedia ident="fig0015"></elsevierMultimedia><p id="par0055" class="elsevierStylePara elsevierViewall"><a class="elsevierStyleCrossRef" href="#fig0020">Fig. 4</a> shows the FTIR spectra of the ZnO film. The peak can be observed at 415<span class="elsevierStyleHsp" style=""></span>cm<span class="elsevierStyleSup">−1</span> related to Zn<span class="elsevierStyleGlyphsbnd"></span>O stretching modes (<a class="elsevierStyleCrossRef" href="#bib0005">Adamopoulos et al., 2011</a>; <a class="elsevierStyleCrossRef" href="#bib0040">Gayen, Sarkar, Hussain, Bhar, & Pal, 2011</a>). The peak at 1627<span class="elsevierStyleHsp" style=""></span>cm<span class="elsevierStyleSup">−1</span> is attributed to O<span class="elsevierStyleGlyphsbnd"></span>H bending modes. Also, the peaks at 2500–3500<span class="elsevierStyleHsp" style=""></span>cm<span class="elsevierStyleSup">−1</span> are due to C<span class="elsevierStyleGlyphsbnd"></span>H and O<span class="elsevierStyleGlyphsbnd"></span>H stretching modes (<a class="elsevierStyleCrossRefs" href="#bib0005">Adamopoulos et al., 2011; Gayen et al., 2011</a>). The peaks at 1413<span class="elsevierStyleHsp" style=""></span>cm<span class="elsevierStyleSup">−1</span> and 1530<span class="elsevierStyleHsp" style=""></span>cm<span class="elsevierStyleSup">−1</span> are attributed to C<span class="elsevierStyleGlyphsbnd"></span>O stretching modes, while at 1750<span class="elsevierStyleHsp" style=""></span>cm<span class="elsevierStyleSup">−1</span> they are attributed to C<span class="elsevierStyleGlyphdbnd"></span>O bonds (<a class="elsevierStyleCrossRefs" href="#bib0005">Adamopoulos et al., 2011; Gayen et al., 2011</a>). The presence of C<span class="elsevierStyleGlyphsbnd"></span>O bonds suggests an incomplete precursor pyrolysis due to the low deposition temperature (<a class="elsevierStyleCrossRef" href="#bib0005">Adamopoulos et al., 2011</a>). However, the characteristic Zn<span class="elsevierStyleGlyphsbnd"></span>O band, approximately at 415<span class="elsevierStyleHsp" style=""></span>cm<span class="elsevierStyleSup">−1</span>, indicates the ZnO formation. On the other hand, it is important to mention that bonds related to O<span class="elsevierStyleGlyphsbnd"></span>H stretching have been previously reported in ZnO films, indicating the presence of O<span class="elsevierStyleGlyphsbnd"></span>H complexes that are associated with different defects and increased free-carrier concentration (<a class="elsevierStyleCrossRefs" href="#bib0005">Adamopoulos et al., 2011; Gayen et al., 2011</a>; <a class="elsevierStyleCrossRef" href="#bib0070">McCluskey, Jokela, Zhuravlev, Simpson, & Lynn, 2002</a>; <a class="elsevierStyleCrossRef" href="#bib0095">Shi et al., 2005</a>). This agrees with what was observed in the photoluminescence spectra. Although the ZnO films need to be improved, the films have been successfully used in TFTs fabricated in silicon wafers (<a class="elsevierStyleCrossRef" href="#bib0025">Dominguez et al., 2015</a>; <a class="elsevierStyleCrossRef" href="#bib0030">Dominguez-Jimenez et al., 2015</a>). Further research is necessary to optimize the ZnO film.</p><elsevierMultimedia ident="fig0020"></elsevierMultimedia><p id="par0060" class="elsevierStylePara elsevierViewall"><a class="elsevierStyleCrossRef" href="#fig0025">Fig. 5</a> shows the capacitance–voltage characteristics at 10<span class="elsevierStyleHsp" style=""></span>kHz for the MIS capacitors. When a negative voltage is applied at the top contact, there is an accumulation layer of electrons in the ZnO film at the SOG/DI-ZnO interface, as a result, the capacitance–voltage characteristics show the dielectric capacitance (Cox). On the other hand, when a positive voltage is applied at the top contact, the characteristics show a minimum capacitance due to the depletion region in the ZnO film at the SOG/DI-ZnO interface. From the capacitance–voltage characteristics, it can be observed that there is a very low hysteresis when the characteristics are forward and reverse measured. Nevertheless, at negative voltage values, the accumulation region presents effects of interface states (<a class="elsevierStyleCrossRef" href="#bib0075">Neamen, 2003</a>). This is attributed to the defects in the ZnO film near the dielectric-semiconductor interface, as the photoluminescence and FTIR spectroscopies show. Despite this, the MIS capacitors display a similar behavior compared to the capacitance–voltage curves in ZnO TFTs fabricated in silicon wafers with thermally grown silicon oxide as gate dielectric (<a class="elsevierStyleCrossRef" href="#bib0010">Bang et al., 2011</a>).</p><elsevierMultimedia ident="fig0025"></elsevierMultimedia><p id="par0065" class="elsevierStylePara elsevierViewall"><a class="elsevierStyleCrossRef" href="#fig0030">Fig. 6</a> shows the current density of the ZnO MIS capacitors. Typically, in solution-processed devices, the evaporation of solvents during the deposition of the films induces pores and lower density in the film which affect the electrical characteristics of the devices (<a class="elsevierStyleCrossRef" href="#bib0115">Yoo et al., 2013</a>). The breakdown voltage of the MIS capacitor can be observed at 36<span class="elsevierStyleHsp" style=""></span>V because of the dielectric breakdown. Although a higher capacitor breakdown voltage was expected, the values of current density and capacitor breakdown voltage obtained are reliable for electronic devices applications (<a class="elsevierStyleCrossRefs" href="#bib0085">Park et al., 2013; Yoo et al., 2013</a>).</p><elsevierMultimedia ident="fig0030"></elsevierMultimedia><p id="par0070" class="elsevierStylePara elsevierViewall">From the overall characteristics presented, ZnO MIS capacitors can be explored to be used in transparent electronics. ZnO MIS capacitors were fabricated employing simple and low-cost solution-process techniques with no-vacuum needed, using feasible and easily-prepared precursor solutions.</p></span><span id="sec0020" class="elsevierStyleSection elsevierViewall"><span class="elsevierStyleLabel">4</span><span class="elsevierStyleSectionTitle" id="sect0030">Conclusions</span><p id="par0075" class="elsevierStylePara elsevierViewall">In summary, the development of fully solution-processed zinc oxide metal–insulator–semiconductor capacitors employing the ultrasonic spray pyrolysis and spin-coating techniques was successfully presented. Fluorine tin oxide and spin-on glass were used as transparent electrode and dielectric film, respectively. The MIS capacitors were highly transparent, which their use makes feasible in transparent electronics. The capacitance–voltage characteristics showed a very low hysteresis when the characteristics were forward and reverse measured. The accumulation region presents effects of interface states attributed to the defects in the ZnO film near the dielectric-semiconductor interface, as the photoluminescence and FTIR spectroscopies showed.</p></span><span id="sec0025" class="elsevierStyleSection elsevierViewall"><span class="elsevierStyleSectionTitle" id="sect0035">Conflict of interest</span><p id="par0090" class="elsevierStylePara elsevierViewall">The authors have no conflicts of interest to declare.</p></span></span>" "textoCompletoSecciones" => array:1 [ "secciones" => array:9 [ 0 => array:3 [ "identificador" => "xres856060" "titulo" => "Abstract" "secciones" => array:1 [ 0 => array:1 [ "identificador" => "abst0005" ] ] ] 1 => array:2 [ "identificador" => "xpalclavsec850129" "titulo" => "Keywords" ] 2 => array:2 [ "identificador" => "sec0005" "titulo" => "Introduction" ] 3 => array:2 [ "identificador" => "sec0010" "titulo" => "Experiment" ] 4 => array:2 [ "identificador" => "sec0015" "titulo" => "Results and discussion" ] 5 => array:2 [ "identificador" => "sec0020" "titulo" => "Conclusions" ] 6 => array:2 [ "identificador" => "sec0025" "titulo" => "Conflict of interest" ] 7 => array:2 [ "identificador" => "xack287101" "titulo" => "Acknowledgment" ] 8 => array:1 [ "titulo" => "References" ] ] ] "pdfFichero" => "main.pdf" "tienePdf" => true "fechaRecibido" => "2016-08-10" "fechaAceptado" => "2017-01-09" "PalabrasClave" => array:1 [ "en" => array:1 [ 0 => array:4 [ "clase" => "keyword" "titulo" => "Keywords" "identificador" => "xpalclavsec850129" "palabras" => array:3 [ 0 => "MIS capacitors" 1 => "Solution-processes" 2 => "Transparent electronics" ] ] ] ] "tieneResumen" => true "resumen" => array:1 [ "en" => array:2 [ "titulo" => "Abstract" "resumen" => "<span id="abst0005" class="elsevierStyleSection elsevierViewall"><p id="spar0005" class="elsevierStyleSimplePara elsevierViewall">In this work, the fabrication and characterization of fully solution-processed zinc oxide metal–insulator–semiconductor (MIS) capacitors by ultrasonic spray pyrolysis (USP) are presented. Fluorine tin oxide by USP was used as transparent electrode, while spin-on glass by spin-coating was used as dielectric and zinc oxide by USP was used as active layer. Also, the zinc oxide film was characterized using photoluminescence spectroscopy, X-ray diffraction and Fourier transform infrared spectroscopy. The MIS capacitors were fabricated over glass slides and were highly transparent in the visible range, which makes their use feasible in transparent electronics. Employing capacitance–voltage and current–voltage measurements, the MIS capacitors were characterized.</p></span>" ] ] "NotaPie" => array:1 [ 0 => array:1 [ "nota" => "<p class="elsevierStyleNotepara" id="npar0005">Peer Review under the responsibility of Universidad Nacional Autónoma de México.</p>" ] ] "multimedia" => array:6 [ 0 => array:7 [ "identificador" => "fig0005" "etiqueta" => "Fig. 1" "tipo" => "MULTIMEDIAFIGURA" "mostrarFloat" => true "mostrarDisplay" => false "figura" => array:1 [ 0 => array:4 [ "imagen" => "gr1.jpeg" "Alto" => 985 "Ancho" => 2667 "Tamanyo" => 178864 ] ] "descripcion" => array:1 [ "en" => "<p id="spar0010" class="elsevierStyleSimplePara elsevierViewall">ZnO MIS capacitor structure. (a) Schematic cross section and (b) photograph of the fabricated devices.</p>" ] ] 1 => array:7 [ "identificador" => "fig0010" "etiqueta" => "Fig. 2" "tipo" => "MULTIMEDIAFIGURA" "mostrarFloat" => true "mostrarDisplay" => false "figura" => array:1 [ 0 => array:4 [ "imagen" => "gr2.jpeg" "Alto" => 1398 "Ancho" => 1728 "Tamanyo" => 104138 ] ] "descripcion" => array:1 [ "en" => "<p id="spar0015" class="elsevierStyleSimplePara elsevierViewall">XRD pattern of the as-deposited ZnO films by ultrasonic spray pyrolysis.</p>" ] ] 2 => array:7 [ "identificador" => "fig0015" "etiqueta" => "Fig. 3" "tipo" => "MULTIMEDIAFIGURA" "mostrarFloat" => true "mostrarDisplay" => false "figura" => array:1 [ 0 => array:4 [ "imagen" => "gr3.jpeg" "Alto" => 1380 "Ancho" => 1673 "Tamanyo" => 88674 ] ] "descripcion" => array:1 [ "en" => "<p id="spar0020" class="elsevierStyleSimplePara elsevierViewall">Photoluminescence of the as-deposited ZnO films by ultrasonic spray pyrolysis.</p>" ] ] 3 => array:7 [ "identificador" => "fig0020" "etiqueta" => "Fig. 4" "tipo" => "MULTIMEDIAFIGURA" "mostrarFloat" => true "mostrarDisplay" => false "figura" => array:1 [ 0 => array:4 [ "imagen" => "gr4.jpeg" "Alto" => 1332 "Ancho" => 1721 "Tamanyo" => 108430 ] ] "descripcion" => array:1 [ "en" => "<p id="spar0025" class="elsevierStyleSimplePara elsevierViewall">FTIR spectra of the as-deposited ZnO films by ultrasonic spray pyrolysis.</p>" ] ] 4 => array:7 [ "identificador" => "fig0025" "etiqueta" => "Fig. 5" "tipo" => "MULTIMEDIAFIGURA" "mostrarFloat" => true "mostrarDisplay" => false "figura" => array:1 [ 0 => array:4 [ "imagen" => "gr5.jpeg" "Alto" => 1308 "Ancho" => 1751 "Tamanyo" => 112309 ] ] "descripcion" => array:1 [ "en" => "<p id="spar0030" class="elsevierStyleSimplePara elsevierViewall">Forward and reverse capacitance–voltage curves of the ZnO MIS capacitors using FTO and SOG/DI films as transparent electrode and dielectric, respectively.</p>" ] ] 5 => array:7 [ "identificador" => "fig0030" "etiqueta" => "Fig. 6" "tipo" => "MULTIMEDIAFIGURA" "mostrarFloat" => true "mostrarDisplay" => false "figura" => array:1 [ 0 => array:4 [ "imagen" => "gr6.jpeg" "Alto" => 1324 "Ancho" => 1671 "Tamanyo" => 86713 ] ] "descripcion" => array:1 [ "en" => "<p id="spar0035" class="elsevierStyleSimplePara elsevierViewall">Current density of the ZnO MIS capacitors indicating the capacitor breakdown voltage at 36<span class="elsevierStyleHsp" style=""></span>V.</p>" ] ] ] "bibliografia" => array:2 [ "titulo" => "References" "seccion" => array:1 [ 0 => array:2 [ "identificador" => "bibs0005" "bibliografiaReferencia" => array:26 [ 0 => array:3 [ "identificador" => "bib0005" "etiqueta" => "Adamopoulos et al., 2011" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "Structural and electrical characterization of ZnO films grown by spray pyrolysis and their application in thin-film transistors" "autores" => array:1 [ 0 => array:2 [ "etal" => true "autores" => array:6 [ 0 => "G. Adamopoulos" 1 => "A. Bashir" 2 => "W.P. Gillin" 3 => "S. Georgakopoulos" 4 => "M. Shkunov" 5 => "M.A. Baklar" ] ] ] ] ] "host" => array:1 [ 0 => array:1 [ "Revista" => array:6 [ "tituloSerie" => "Advanced Functional Materials" "fecha" => "2011" "volumen" => "21" "numero" => "3" "paginaInicial" => "525" "paginaFinal" => "531" ] ] ] ] ] ] 1 => array:3 [ "identificador" => "bib0010" "etiqueta" => "Bang et al., 2011" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "The effects of post-annealing on the performance of ZnO thin film transistors" "autores" => array:1 [ 0 => array:2 [ "etal" => true "autores" => array:6 [ 0 => "S. Bang" 1 => "S. Lee" 2 => "J. Park" 3 => "S. Park" 4 => "Y. Ko" 5 => "C. Choi" ] ] ] ] ] "host" => array:1 [ 0 => array:1 [ "Revista" => array:6 [ "tituloSerie" => "Thin Solid Films" "fecha" => "2011" "volumen" => "519" "numero" => "22" "paginaInicial" => "8109" "paginaFinal" => "8113" ] ] ] ] ] ] 2 => array:3 [ "identificador" => "bib0015" "etiqueta" => "Bashir et al., 2009" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "High-performance zinc oxide transistors and circuits fabricated by spray pyrolysis in ambient atmosphere" "autores" => array:1 [ 0 => array:2 [ "etal" => true "autores" => array:6 [ 0 => "A. Bashir" 1 => "P.H. Wöbkenberg" 2 => "J. Smith" 3 => "J.M. Ball" 4 => "G. Adamopoulos" 5 => "D.D. Bradley" ] ] ] ] ] "host" => array:1 [ 0 => array:1 [ "Revista" => array:6 [ "tituloSerie" => "Advanced Materials" "fecha" => "2009" "volumen" => "21" "numero" => "21" "paginaInicial" => "2226" "paginaFinal" => "2231" ] ] ] ] ] ] 3 => array:3 [ "identificador" => "bib0020" "etiqueta" => "Dominguez et al., 2012" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "Study of dilution of spin-on glass by Fourier transform infrared spectroscopy" "autores" => array:1 [ 0 => array:2 [ "etal" => false "autores" => array:5 [ 0 => "M. Dominguez" 1 => "P. Rosales" 2 => "A. Torres" 3 => "M. Moreno" 4 => "A. Orduña" ] ] ] ] ] "host" => array:1 [ 0 => array:1 [ "Revista" => array:6 [ "tituloSerie" => "Thin Solid Films" "fecha" => "2012" "volumen" => "520" "numero" => "15" "paginaInicial" => "5018" "paginaFinal" => "5020" ] ] ] ] ] ] 4 => array:3 [ "identificador" => "bib0025" "etiqueta" => "Dominguez et al., 2015" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "Impact of active layer thickness in thin-film transistors based on zinc oxide by ultrasonic spray pyrolysis" "autores" => array:1 [ 0 => array:2 [ "etal" => true "autores" => array:6 [ 0 => "M.A. Dominguez" 1 => "F. Flores" 2 => "A. Luna" 3 => "J. Martinez" 4 => "J.A. Luna-Lopez" 5 => "S. Alcantara" ] ] ] ] ] "host" => array:1 [ 0 => array:1 [ "Revista" => array:5 [ "tituloSerie" => "Solid-State Electronics" "fecha" => "2015" "volumen" => "109" "paginaInicial" => "33" "paginaFinal" => "36" ] ] ] ] ] ] 5 => array:3 [ "identificador" => "bib0030" "etiqueta" => "Dominguez-Jimenez et al., 2015" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "Thin-film transistors based on zinc oxide films by ultrasonic spray pyrolysis" "autores" => array:1 [ 0 => array:2 [ "etal" => true "autores" => array:6 [ 0 => "M.A. Dominguez-Jimenez" 1 => "F. Flores-Gracia" 2 => "A. Luna-Flores" 3 => "J. Martinez-Juarez" 4 => "J.A. Luna-Lopez" 5 => "S. Alcantara-Iniesta" ] ] ] ] ] "host" => array:1 [ 0 => array:1 [ "Revista" => array:6 [ "tituloSerie" => "Revista mexicana de física" "fecha" => "2015" "volumen" => "61" "numero" => "2" "paginaInicial" => "123" "paginaFinal" => "126" ] ] ] ] ] ] 6 => array:3 [ "identificador" => "bib0035" "etiqueta" => "Dominguez et al., 2016" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "Study of stability of solution-processed dielectric film under electrical stress" "autores" => array:1 [ 0 => array:2 [ "etal" => false "autores" => array:3 [ 0 => "M.A. Dominguez" 1 => "O. Obregon" 2 => "J.A. Luna-Lopez" ] ] ] ] ] "host" => array:1 [ 0 => array:1 [ "Revista" => array:5 [ "tituloSerie" => "Journal of Alloys and Compounds" "fecha" => "2016" "volumen" => "688" "paginaInicial" => "893" "paginaFinal" => "896" ] ] ] ] ] ] 7 => array:3 [ "identificador" => "bib0040" "etiqueta" => "Gayen et al., 2011" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "Zno films prepared by modified sol–gel technique" "autores" => array:1 [ 0 => array:2 [ "etal" => false "autores" => array:5 [ 0 => "R. Gayen" 1 => "K. Sarkar" 2 => "S. Hussain" 3 => "R. Bhar" 4 => "A. Pal" ] ] ] ] ] "host" => array:1 [ 0 => array:2 [ "doi" => "10.1039/c7cc02941a" "Revista" => array:6 [ "tituloSerie" => "Indian Journal of Pure & Applied Physics (IJPAP)" "fecha" => "2011" "volumen" => "49" "paginaInicial" => "470" "paginaFinal" => "477" "link" => array:1 [ 0 => array:2 [ "url" => "https://www.ncbi.nlm.nih.gov/pubmed/28636035" "web" => "Medline" ] ] ] ] ] ] ] ] 8 => array:3 [ "identificador" => "bib0045" "etiqueta" => "Hunter et al., 2015" "referencia" => array:1 [ 0 => array:3 [ "comentario" => "223304-1–223304-4" "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "Low-voltage polymer/small-molecule blend organic thin-film transistors and circuits fabricated via spray deposition" "autores" => array:1 [ 0 => array:2 [ "etal" => false "autores" => array:6 [ 0 => "B.S. Hunter" 1 => "J.W. Ward" 2 => "M.M. Payne" 3 => "J.E. Anthony" 4 => "O.D. Jurchescu" 5 => "T.D. Anthopoulos" ] ] ] ] ] "host" => array:1 [ 0 => array:1 [ "Revista" => array:4 [ "tituloSerie" => "Applied Physics Letters" "fecha" => "2015" "volumen" => "106" "numero" => "22" ] ] ] ] ] ] 9 => array:3 [ "identificador" => "bib0050" "etiqueta" => "Janotti and Van de Walle, 2007" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "Native point defects in ZnO" "autores" => array:1 [ 0 => array:2 [ "etal" => false "autores" => array:2 [ 0 => "A. Janotti" 1 => "C.G. Van de Walle" ] ] ] ] ] "host" => array:1 [ 0 => array:1 [ "Revista" => array:5 [ "tituloSerie" => "Physical Review B" "fecha" => "2007" "volumen" => "76" "numero" => "16" "paginaInicial" => "165202" ] ] ] ] ] ] 10 => array:3 [ "identificador" => "bib0055" "etiqueta" => "Khan et al., 2011" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "Fabrication and characterization of all-polymer, transparent ferroelectric capacitors on flexible substrates" "autores" => array:1 [ 0 => array:2 [ "etal" => false "autores" => array:3 [ 0 => "M.A. Khan" 1 => "U.S. Bhansali" 2 => "H.N. Alshareef" ] ] ] ] ] "host" => array:1 [ 0 => array:1 [ "Revista" => array:6 [ "tituloSerie" => "Organic Electronics" "fecha" => "2011" "volumen" => "12" "numero" => "12" "paginaInicial" => "2225" "paginaFinal" => "2229" ] ] ] ] ] ] 11 => array:3 [ "identificador" => "bib0060" "etiqueta" => "Langley et al., 2013" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "Flexible transparent conductive materials based on silver nanowire networks: A review" "autores" => array:1 [ 0 => array:2 [ "etal" => false "autores" => array:6 [ 0 => "D. Langley" 1 => "G. Giusti" 2 => "C. Mayousse" 3 => "C. Celle" 4 => "D. Bellet" 5 => "J.P. Simonato" ] ] ] ] ] "host" => array:1 [ 0 => array:2 [ "doi" => "10.1088/0957-4484/24/45/452001" "Revista" => array:6 [ "tituloSerie" => "Nanotechnology" "fecha" => "2013" "volumen" => "24" "numero" => "45" "paginaInicial" => "452001" "link" => array:1 [ 0 => array:2 [ "url" => "https://www.ncbi.nlm.nih.gov/pubmed/24121527" "web" => "Medline" ] ] ] ] ] ] ] ] 12 => array:3 [ "identificador" => "bib0065" "etiqueta" => "Lin et al., 2001" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "Green luminescent center in undoped zinc oxide films deposited on silicon substrates" "autores" => array:1 [ 0 => array:2 [ "etal" => false "autores" => array:3 [ 0 => "B. Lin" 1 => "Z. Fu" 2 => "Y. Jia" ] ] ] ] ] "host" => array:1 [ 0 => array:1 [ "Revista" => array:6 [ "tituloSerie" => "Applied Physics Letters" "fecha" => "2001" "volumen" => "79" "numero" => "7" "paginaInicial" => "943" "paginaFinal" => "945" ] ] ] ] ] ] 13 => array:3 [ "identificador" => "bib0070" "etiqueta" => "McCluskey et al., 2002" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "Infrared spectroscopy of hydrogen in ZnO" "autores" => array:1 [ 0 => array:2 [ "etal" => false "autores" => array:5 [ 0 => "M.D. McCluskey" 1 => "S.J. Jokela" 2 => "K.K. Zhuravlev" 3 => "P.J. Simpson" 4 => "K.G. Lynn" ] ] ] ] ] "host" => array:1 [ 0 => array:1 [ "Revista" => array:6 [ "tituloSerie" => "Applied Physics Letters" "fecha" => "2002" "volumen" => "81" "numero" => "20" "paginaInicial" => "3807" "paginaFinal" => "3809" ] ] ] ] ] ] 14 => array:3 [ "identificador" => "bib0075" "etiqueta" => "Neamen, 2003" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "Semiconductor physics and devices" "autores" => array:1 [ 0 => array:2 [ "etal" => false "autores" => array:1 [ 0 => "D. Neamen" ] ] ] ] ] "host" => array:1 [ 0 => array:1 [ "Libro" => array:5 [ "edicion" => "3rd ed." "fecha" => "2003" "paginaInicial" => "474" "paginaFinal" => "483" "editorial" => "McGraw Hill" ] ] ] ] ] ] 15 => array:3 [ "identificador" => "bib0080" "etiqueta" => "Padilla-Rueda et al., 2012" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "Room temperature pulsed laser deposited ZnO thin films as photoluminescence gas sensors" "autores" => array:1 [ 0 => array:2 [ "etal" => false "autores" => array:3 [ 0 => "D. Padilla-Rueda" 1 => "J.M. Vadillo" 2 => "J.J. Laserna" ] ] ] ] ] "host" => array:1 [ 0 => array:1 [ "Revista" => array:5 [ "tituloSerie" => "Applied Surface Science" "fecha" => "2012" "volumen" => "259" "paginaInicial" => "806" "paginaFinal" => "810" ] ] ] ] ] ] 16 => array:3 [ "identificador" => "bib0085" "etiqueta" => "Park et al., 2013" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric" "autores" => array:1 [ 0 => array:2 [ "etal" => true "autores" => array:6 [ 0 => "J.H. Park" 1 => "Y.B. Yoo" 2 => "K.H. Lee" 3 => "W.S. Jang" 4 => "J.Y. Oh" 5 => "S.S. Chae" ] ] ] ] ] "host" => array:1 [ 0 => array:2 [ "doi" => "10.1021/acsami.7b08117" "Revista" => array:7 [ "tituloSerie" => "ACS Applied Materials & Interfaces" "fecha" => "2013" "volumen" => "5" "numero" => "2" "paginaInicial" => "410" "paginaFinal" => "417" "link" => array:1 [ 0 => array:2 [ "url" => "https://www.ncbi.nlm.nih.gov/pubmed/28632386" "web" => "Medline" ] ] ] ] ] ] ] ] 17 => array:3 [ "identificador" => "bib0090" "etiqueta" => "Sepulveda-Guzman et al., 2010" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "Room-temperature deposition of crystalline patterned ZnO films by confined dewetting lithography" "autores" => array:1 [ 0 => array:2 [ "etal" => true "autores" => array:6 [ 0 => "S. Sepulveda-Guzman" 1 => "B. Reeja-Jayan" 2 => "E. De la Rosa" 3 => "U. Ortiz-Mendez" 4 => "C. Reyes-Betanzo" 5 => "R. Cruz-Silva" ] ] ] ] ] "host" => array:1 [ 0 => array:1 [ "Revista" => array:6 [ "tituloSerie" => "Applied Surface Science" "fecha" => "2010" "volumen" => "256" "numero" => "11" "paginaInicial" => "3386" "paginaFinal" => "3389" ] ] ] ] ] ] 18 => array:3 [ "identificador" => "bib0095" "etiqueta" => "Shi et al., 2005" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "Hydrogen local modes and shallow donors in ZnO" "autores" => array:1 [ 0 => array:2 [ "etal" => false "autores" => array:6 [ 0 => "G.A. Shi" 1 => "M. Stavola" 2 => "S.J. Pearton" 3 => "M. Thieme" 4 => "E.V. Lavrov" 5 => "J. Weber" ] ] ] ] ] "host" => array:1 [ 0 => array:1 [ "Revista" => array:5 [ "tituloSerie" => "Physical Review B" "fecha" => "2005" "volumen" => "72" "numero" => "19" "paginaInicial" => "195211" ] ] ] ] ] ] 19 => array:3 [ "identificador" => "bib0100" "etiqueta" => "Wang et al., 2006" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "Effects of postgrowth annealing treatment on the photoluminescence of zinc oxide nanorods" "autores" => array:1 [ 0 => array:2 [ "etal" => true "autores" => array:6 [ 0 => "D. Wang" 1 => "H.W. Seo" 2 => "C.C. Tin" 3 => "M.J. Bozack" 4 => "J.R. Williams" 5 => "M. Park" ] ] ] ] ] "host" => array:1 [ 0 => array:1 [ "Revista" => array:5 [ "tituloSerie" => "Journal of Applied Physics" "fecha" => "2006" "volumen" => "99" "numero" => "11" "paginaInicial" => "113509" ] ] ] ] ] ] 20 => array:3 [ "identificador" => "bib0105" "etiqueta" => "Xian and Yoon, 2009" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "Transparent capacitor for the storage of electric power produced by transparent solar cells" "autores" => array:1 [ 0 => array:2 [ "etal" => false "autores" => array:2 [ 0 => "C.J. Xian" 1 => "S.G. Yoon" ] ] ] ] ] "host" => array:1 [ 0 => array:1 [ "Revista" => array:6 [ "tituloSerie" => "Journal of the Electrochemical Society" "fecha" => "2009" "volumen" => "156" "numero" => "11" "paginaInicial" => "G180" "paginaFinal" => "G183" ] ] ] ] ] ] 21 => array:3 [ "identificador" => "bib0110" "etiqueta" => "Xiao et al., 2013" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "Nanocrystalline ZnO films prepared by pulsed laser deposition and their abnormal optical properties" "autores" => array:1 [ 0 => array:2 [ "etal" => false "autores" => array:4 [ 0 => "S.S. Xiao" 1 => "L. Zhao" 2 => "Y.H. Liu" 3 => "J.S. Lian" ] ] ] ] ] "host" => array:1 [ 0 => array:1 [ "Revista" => array:5 [ "tituloSerie" => "Applied Surface Science" "fecha" => "2013" "volumen" => "283" "paginaInicial" => "781" "paginaFinal" => "787" ] ] ] ] ] ] 22 => array:3 [ "identificador" => "bib0115" "etiqueta" => "Yoo et al., 2013" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "Solution-processed high-k HfO<span class="elsevierStyleInf">2</span> gate dielectric processed under softening temperature of polymer substrates" "autores" => array:1 [ 0 => array:2 [ "etal" => true "autores" => array:6 [ 0 => "Y.B. Yoo" 1 => "J.H. Park" 2 => "K.H. Lee" 3 => "H.W. Lee" 4 => "K.M. Song" 5 => "S.J. Lee" ] ] ] ] ] "host" => array:1 [ 0 => array:1 [ "Revista" => array:6 [ "tituloSerie" => "Journal of Materials Chemistry C" "fecha" => "2013" "volumen" => "1" "numero" => "8" "paginaInicial" => "1651" "paginaFinal" => "1658" ] ] ] ] ] ] 23 => array:3 [ "identificador" => "bib0120" "etiqueta" => "Yu et al., 2015" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "Fully transparent thin-film varactors: Fabrication and performance" "autores" => array:1 [ 0 => array:2 [ "etal" => false "autores" => array:5 [ 0 => "S. Yu" 1 => "L. Li" 2 => "W. Zhang" 3 => "Z. Sun" 4 => "H. Zheng" ] ] ] ] ] "host" => array:1 [ 0 => array:1 [ "Revista" => array:6 [ "tituloSerie" => "Journal of Materials Chemistry C" "fecha" => "2015" "volumen" => "3" "numero" => "22" "paginaInicial" => "5703" "paginaFinal" => "5708" ] ] ] ] ] ] 24 => array:3 [ "identificador" => "bib0125" "etiqueta" => "Zhang et al., 2015" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "Transparent and flexible capacitors based on nanolaminate Al<span class="elsevierStyleInf">2</span>O<span class="elsevierStyleInf">3</span>/TiO<span class="elsevierStyleInf">2</span>/Al<span class="elsevierStyleInf">2</span>O<span class="elsevierStyleInf">3</span>" "autores" => array:1 [ 0 => array:2 [ "etal" => false "autores" => array:6 [ 0 => "G. Zhang" 1 => "H. Wu" 2 => "C. Chen" 3 => "T. Wang" 4 => "J. Yue" 5 => "C. Liu" ] ] ] ] ] "host" => array:1 [ 0 => array:2 [ "doi" => "10.1186/s11671-015-0784-8" "Revista" => array:6 [ "tituloSerie" => "Nanoscale Research Letters" "fecha" => "2015" "volumen" => "10" "numero" => "1" "paginaInicial" => "76" "link" => array:1 [ 0 => array:2 [ "url" => "https://www.ncbi.nlm.nih.gov/pubmed/25852372" "web" => "Medline" ] ] ] ] ] ] ] ] 25 => array:3 [ "identificador" => "bib0130" "etiqueta" => "Zhu et al., 2014" "referencia" => array:1 [ 0 => array:2 [ "contribucion" => array:1 [ 0 => array:2 [ "titulo" => "Transparent paper: Fabrications, properties, and device applications" "autores" => array:1 [ 0 => array:2 [ "etal" => false "autores" => array:5 [ 0 => "H. Zhu" 1 => "Z. Fang" 2 => "C. Preston" 3 => "Y. Li" 4 => "L. Hu" ] ] ] ] ] "host" => array:1 [ 0 => array:2 [ "doi" => "10.1111/plb.12592" "Revista" => array:7 [ "tituloSerie" => "Energy & Environmental Science" "fecha" => "2014" "volumen" => "7" "numero" => "1" "paginaInicial" => "269" "paginaFinal" => "287" "link" => array:1 [ 0 => array:2 [ "url" => "https://www.ncbi.nlm.nih.gov/pubmed/28637094" "web" => "Medline" ] ] ] ] ] ] ] ] ] ] ] ] "agradecimientos" => array:1 [ 0 => array:4 [ "identificador" => "xack287101" "titulo" => "Acknowledgment" "texto" => "<p id="par0085" class="elsevierStylePara elsevierViewall">The authors would like to thank NPTC-PRODEP by <span class="elsevierStyleGrantSponsor" id="gs1">SEP-Mexico and Ciencia Basica SEP-CONACYT</span> grant no. <span class="elsevierStyleGrantNumber" refid="gs1">256513</span> for funding for this project.</p>" "vista" => "all" ] ] ] "idiomaDefecto" => "en" "url" => "/16656423/0000001500000003/v1_201706230112/S1665642317300469/v1_201706230112/en/main.assets" "Apartado" => array:4 [ "identificador" => "41800" "tipo" => "SECCION" "en" => array:2 [ "titulo" => "Articles" "idiomaDefecto" => true ] "idiomaDefecto" => "en" ] "PDF" => "https://static.elsevier.es/multimedia/16656423/0000001500000003/v1_201706230112/S1665642317300469/v1_201706230112/en/main.pdf?idApp=UINPBA00004N&text.app=https://www.elsevier.es/" "EPUB" => "https://multimedia.elsevier.es/PublicationsMultimediaV1/item/epub/S1665642317300469?idApp=UINPBA00004N" ]
| Year/Month | Html | Total | |
|---|---|---|---|
| 2024 October | 13 | 8 | 21 |
| 2024 September | 22 | 7 | 29 |
| 2024 August | 23 | 2 | 25 |
| 2024 July | 13 | 4 | 17 |
| 2024 June | 15 | 7 | 22 |
| 2024 May | 20 | 13 | 33 |
| 2024 April | 28 | 4 | 32 |
| 2024 March | 21 | 6 | 27 |
| 2024 February | 32 | 3 | 35 |
| 2024 January | 30 | 3 | 33 |
| 2023 December | 36 | 9 | 45 |
| 2023 November | 28 | 7 | 35 |
| 2023 October | 43 | 8 | 51 |
| 2023 September | 44 | 5 | 49 |
| 2023 August | 28 | 5 | 33 |
| 2023 July | 61 | 10 | 71 |
| 2023 June | 33 | 6 | 39 |
| 2023 May | 46 | 3 | 49 |
| 2023 April | 39 | 7 | 46 |
| 2023 March | 53 | 2 | 55 |
| 2023 February | 25 | 2 | 27 |
| 2023 January | 37 | 3 | 40 |
| 2022 December | 29 | 10 | 39 |
| 2022 November | 33 | 6 | 39 |
| 2022 October | 39 | 10 | 49 |
| 2022 September | 18 | 16 | 34 |
| 2022 August | 32 | 9 | 41 |
| 2022 July | 27 | 10 | 37 |
| 2022 June | 8 | 12 | 20 |
| 2022 May | 23 | 8 | 31 |
| 2022 April | 16 | 12 | 28 |
| 2022 March | 21 | 7 | 28 |
| 2022 February | 29 | 8 | 37 |
| 2022 January | 56 | 10 | 66 |
| 2021 December | 25 | 14 | 39 |
| 2021 November | 22 | 15 | 37 |
| 2021 October | 25 | 14 | 39 |
| 2021 September | 19 | 10 | 29 |
| 2021 August | 39 | 9 | 48 |
| 2021 July | 35 | 15 | 50 |
| 2021 June | 28 | 7 | 35 |
| 2021 May | 12 | 10 | 22 |
| 2021 April | 45 | 25 | 70 |
| 2021 March | 16 | 4 | 20 |
| 2021 February | 5 | 6 | 11 |
| 2021 January | 15 | 12 | 27 |
| 2020 December | 14 | 9 | 23 |
| 2020 November | 11 | 7 | 18 |
| 2020 October | 11 | 9 | 20 |
| 2020 September | 22 | 6 | 28 |
| 2020 August | 28 | 1 | 29 |
| 2020 July | 13 | 3 | 16 |
| 2020 June | 9 | 7 | 16 |
| 2020 May | 23 | 4 | 27 |
| 2020 April | 19 | 1 | 20 |
| 2020 March | 20 | 0 | 20 |
| 2020 February | 14 | 1 | 15 |
| 2020 January | 17 | 4 | 21 |
| 2019 December | 12 | 5 | 17 |
| 2019 November | 21 | 7 | 28 |
| 2019 October | 19 | 4 | 23 |
| 2019 September | 28 | 14 | 42 |
| 2019 August | 15 | 5 | 20 |
| 2019 July | 21 | 7 | 28 |
| 2019 June | 32 | 22 | 54 |
| 2019 May | 57 | 47 | 104 |
| 2019 April | 44 | 29 | 73 |
| 2019 March | 10 | 7 | 17 |
| 2019 February | 19 | 6 | 25 |
| 2019 January | 8 | 4 | 12 |
| 2018 December | 16 | 5 | 21 |
| 2018 November | 17 | 8 | 25 |
| 2018 October | 25 | 13 | 38 |
| 2018 September | 46 | 5 | 51 |
| 2018 August | 9 | 1 | 10 |
| 2018 July | 13 | 1 | 14 |
| 2018 June | 20 | 4 | 24 |
| 2018 May | 24 | 7 | 31 |
| 2018 April | 12 | 3 | 15 |
| 2018 March | 8 | 1 | 9 |
| 2018 February | 13 | 0 | 13 |
| 2018 January | 12 | 1 | 13 |
| 2017 December | 9 | 0 | 9 |
| 2017 November | 15 | 0 | 15 |
| 2017 October | 12 | 2 | 14 |
| 2017 September | 10 | 0 | 10 |
| 2017 August | 20 | 2 | 22 |
| 2017 July | 16 | 2 | 18 |
| 2017 June | 9 | 5 | 14 |
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